PECVD (Plasma-Enhanced Chemical Vapor Deposition) equipment is a vital tool in semiconductor manufacturing processes. It facilitates the deposition of thin films onto substrates through a plasma-enhanced chemical reaction in a vacuum environment. This process enables the creation of uniform, dense, and high-quality thin film coatings on the surface of semiconductor substrates. PECVD equipment utilizes plasma (or active gases) to excite chemical species, such as silicon precursor gases (e.g., silane), nitrogen precursor gases (e.g., ammonia), and hydrogen gas, to produce the desired deposition materials. These excited chemical species react on the substrate surface, forming the desired thin film structures.
One of the key advantages of PECVD equipment is its ability to deposit thin films at relatively low temperatures, minimizing substrate damage. It also allows for the formation of various thin films with adjustable chemical compositions and structures. Additionally, PECVD equipment offers high deposition rates and excellent deposition uniformity, making it suitable for large-area substrate deposition and batch production. PECVD equipment finds widespread applications in the semiconductor industry, particularly in the fabrication of insulation layers (such as silicon oxide, silicon nitride), conductive films (such as polysilicon), and transparent conductive films (such as indium tin oxide). It is also utilized in other fields such as solar cell manufacturing, display devices, optical coatings, and biomedical devices.